Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

Posted 13 Hours Ago
Be an Early Applicant
Hiring Remotely in Kumamoto, JPN
Remote or Hybrid
Expert/Leader
3D Printing
The Role
Lead development and integration of medium-voltage shielded-gate trench MOSFET process modules. Define processes, run TCAD simulations, perform wafer probing and electrical/package-level analysis, drive yield improvements, support technology transfer and derivative product development with foundry and cross-functional teams.
Summary Generated by Built In
Job Description

We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with the design, application, and marketing teams, as well as external foundry partners, to drive innovation, optimize performance, and accelerate product industrialization.

Key Responsibilities:

  • Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
  • Set up key process modules required for the development of cutting-edge MV shielded-gate trench MOSFET technologies
  • Perform wafer probing and analyze assembled product performance data for each development cycle
  • Analyze wafer-level electrical test results and package-level performance data for each development iteration
  • Support derivative technology development based on proven technology platforms
  • Lead yield improvement activities and support technology transfer to mass production
  • Contribute to the development of derivative products based on established and mature technology platforms

Qualifications

  • Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field
  • Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETs
  • Solid understanding of power device physics and semiconductor fabrication processes
  • Hands-on experience with TCAD tools and simulation-based device analysis
  • Intermediate-level proficiency in both written and spoken English and Japanese

Additional Information

Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier. With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world‑leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future.

At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives.

We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process.

Are you ready to join our team and shape the future with us?

Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our Diversity & Inclusion Statement.

Skills Required

  • M.S. in Electrical Engineering, Physics, or related field
  • Ph.D. in Electrical Engineering, Physics, or related field
  • Up to 15 years experience in power semiconductor device or process development
  • Experience with Si-based medium-voltage shielded-gate trench MOSFETs (preferred)
  • Solid understanding of power device physics and semiconductor fabrication processes
  • Hands-on experience with TCAD tools and simulation-based device analysis
  • Experience performing wafer probing and analyzing wafer-level electrical and package-level performance data
  • Experience leading yield improvement activities and supporting technology transfer to mass production
  • Intermediate proficiency in written and spoken English and Japanese

Renesas Electronics Compensation & Benefits Highlights

The following summarizes recurring compensation and benefits themes identified from responses generated by popular LLMs to common candidate questions about Renesas Electronics and has not been reviewed or approved by Renesas Electronics.

  • Fair & Transparent Compensation Feedback suggests pay is generally fair-to-good across many roles, with base pay aligned to prevailing market levels in multiple U.S. locations. Engineering and leadership tracks can be competitive on total compensation, reinforcing a sense that pay can meet market expectations in key job families.
  • Healthcare Strength Feedback suggests core medical, dental, and vision coverage is solid and well-regarded by employees. Day-one eligibility in U.S. roles is described, supporting confidence in access and continuity of care.
  • Leave & Time Off Breadth Feedback suggests PTO, paid holidays, sick time, and parental leave provide a comprehensive time-off framework. Company initiatives like Renesas Day and meeting-light Focus Fridays further support time away and balance.

Renesas Electronics Insights

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The Company
HQ: Tokyo
10,040 Employees

What We Do

We're the world's leading semiconductor manufacturer. Our mission is to make our lives easier and a world that's safer, healthier, greener, and smarter.

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