Design Architecture, Principal Engineer

Our vision is to transform how the world uses information to enrich life for all .
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
HBM Design Architecture - Principal Engineer
Role Overview
We are seeking a highly motivated HBM Design Architecture Engineer (Principal Engineer) to drive exploration and definition of next-generation AI memory and system environments. In this role, you will analyze emerging infrastructure trends, build performance models, and develop/extend tooling that informs HBM architecture decisions and system-level trade-offs.
You will work closely with architects and senior engineers across DTPCO, Design, and Product/System teams to translate AI workload requirements into actionable memory subsystem and architectural intercept strategies.
Key Responsibilities
You will own and contribute to projects such as:

• Research and synthesize emerging trends in compute, networking, and storage infrastructure to anticipate how future AI systems will evolve.
• Lead HBM architecture analysis by defining bandwidth/latency targets, identifying constraints, and translating workload and system data into actionable memory requirements.
• Develop and maintain simulation frameworks to model AI cluster performance and memory subsystem behavior; validate models against internal and external benchmarks.
• Build and apply first-order performance models spanning HBM bandwidth/latency, GPU/CPU interactions, and memory hierarchy trade-offs to guide architectural decisions.
• Create and curate trend dashboards using CSP benchmarks and industry datasets; communicate insights, assumptions, and sensitivity analyses to stakeholders.
• Partner across DTPCO, Design, and Product/System teams to define architectural intercept opportunities, align on requirements, and influence roadmaps for next-generation AI systems.

Required Qualifications

• Bachelor's or Master's degree in Electrical Engineering, Materials Science or related field (or equivalent practical experience).
• Strong understanding of materials and technology challenges spanning hybrid computing systems
• Experience with memory subsystem design (HBM, DDR, caches) and how memory behavior impacts AI/ML workloads and system bottlenecks.
• Strong multi-disciplinary experience in Fab & Foundry space.

Preferred Skills

• Exposure to electrical, materials challenges and advances in microelectronic manufacturing (compute, memory, interconnects).
• Ability to turn research and model outputs into concise technical recommendations, including trade-off discussions, risk/unknowns, and roadmap implications.

About Micron Technology, Inc.
We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all . With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities - from the data center to the intelligent edge and across the client and mobile user experience.
To learn more, please visit micron.com/careers
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.
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