The Role
Lead electrical characterization of SiC and GaN power devices across temperature, voltage, and switching conditions. Develop and execute static and dynamic test plans, analyze large datasets, automate test methods, correlate wafer/package/system performance, and produce technical reports and recommendations.
Summary Generated by Built In
Position Summary
We are seeking a highly motivated SiC and GaN Device Characterization Engineer to lead electrical characterization of silicon carbide and gallium nitride power semiconductor devices including MOSFETs, JFETs, and power modules. The engineer will support technology teams for all new technology characterization, robustness measurements, FOM validation and competitor benchmarking through device testing and data analysis.
The ideal candidate will have strong expertise in high-voltage/high-temperature semiconductor characterization, power device physics, and test methods for wide-bandgap devices.
Key Responsibilities
- Perform electrical characterization of SiC and GaN power devices across temperature, voltage, and switching conditions.
- Develop and execute characterization plans for:
- Static electrical performance (BVdss, leakage, Vth, RDS(on), transfer/output curves)
- Dynamic switching performance (Qg, switching losses, dv/dt, di/dt, short-circuit, avalanche robustness)
- Characterize SiC JFET/MOSFETs under DC and switching stress.
- Analyze device behavior under gate-drain, drain-source, and transient stress conditions.
- Collaborate with process, design, packaging, and reliability teams to optimize device performance and robustness.
- Drive correlation studies between wafer-level, package-level, and system-level electrical performance.
- Develop automated characterization methodologies using scripting and test automation tools.
- Generate technical reports, and engineering recommendations for design reviews and product qualification.
Required Qualifications
- MS/PhD (preferred) in Electrical Engineering, Materials Science, Physics, or related discipline
- 5 years of experience in power semiconductor characterization, reliability or test engineering
- Strong understanding of SiC and GaN device physics, MOSFETs, JFET operation
- Hands-on experience with semiconductor test instrumentation such as: Keysight Technologies parametric analyzers (e.g., B1505), Curve tracers, High-voltage SMUs, Oscilloscopes, Double-pulse test systems, Thermal chambers and HTRB systems
- Experience analyzing large characterization datasets using Python, JMP, Excel
- Strong statistical data analysis and problem-solving capability
Preferred Qualifications
- Experience with power modules and package interactions.
- Experience with defect screening, failure analysis, and reliability acceleration modeling
- Experience with DOE, SPC, Weibull analysis, and degradation modeling
Skills Required
- MS/PhD in Electrical Engineering, Materials Science, Physics, or related discipline
- 5 years of experience in power semiconductor characterization, reliability or test engineering
- Strong understanding of SiC and GaN device physics and MOSFET/JFET operation
- Hands-on experience with Keysight B1505 parametric analyzers, curve tracers, high-voltage SMUs, oscilloscopes, double-pulse test systems, thermal chambers, HTRB systems
- Experience analyzing large characterization datasets using Python, JMP, Excel
- Strong statistical data analysis and problem-solving capability
- Experience developing automated characterization methodologies and test automation scripting
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The Company
