Job Purpose
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.
The Product Engineer – SiC supports the development and production of high-voltage Silicon Carbide power devices spanning the 650 V to 10 kV range. This role helps ensure robust electrical performance, manufacturability, yield, reliability, and customer quality from initial silicon bring-up through high-volume manufacturing and field deployment.
Key Responsibilities and Duties
- Execute device characterization across the SiC portfolio, including test planning, measurement, and reporting.
- Support the qualification of new technologies and products.
- Develop CP and FT test plans and validate test hardware and test programs.
- Support cross-functional task forces in resolving critical quality and yield issues.
- Analyze CP/FT and characterization data to drive yield and quality improvements.
- Support lot disposition, yield monitoring, and sustaining engineering activities.
- Drive test-limit optimization and continuous-improvement initiatives.
- Perform wafer probing, bench debugging, and root cause analysis.
- Collaborate with Test, Reliability, Operations, and Packaging teams.
Required Qualifications
- B.S. or M.S. in Electrical Engineering, Physics, or a related field.
- 2–3 years of experience in high-voltage SiC (or discrete power device) product, test, or characterization engineering.
- Experience with semiconductor device analysis and debugging.
- Hands-on bench testing experience with high-voltage discrete FETs, including the use of low-voltage (LV) and high-voltage (HV) power supplies, digital multimeters (DMMs), and oscilloscopes.
- Strong data-analysis skills (SPC, Cpk, yield).
- Familiarity with CP/FT production flows.
Preferred Qualifications
- Experience with failure analysis and reliability testing.
- Exposure to SiC device physics and reliability mechanisms (gate oxide, avalanche/UIS, short-circuit).
- Knowledge of JMP, Python, or similar data-analysis tools.
What We Offer
- A front-row seat to the future of power electronics through industry-leading SiC and GaN technologies.
- Hands-on ownership across the full product lifecycle, from silicon bring-up to high-volume manufacturing.
- A fast-paced, execution-focused environment with strong mentorship and deep technical expertise across teams.
Skills Required
- B.S. or M.S. in Electrical Engineering, Physics, or a related field
- 2-3 years of experience in high-voltage SiC or discrete power device product, test, or characterization engineering
- Experience with semiconductor device analysis and debugging
- Hands-on bench testing experience with high-voltage discrete FETs, including LV and HV power supplies, digital multimeters, and oscilloscopes
- Strong data-analysis skills (SPC, Cpk, yield)
- Familiarity with CP/FT production flows
- Experience with failure analysis and reliability testing
- Exposure to SiC device physics and reliability mechanisms (gate oxide, avalanche/UIS, short-circuit)
- Knowledge of JMP, Python, or similar data-analysis tools





