About GlobalFoundries
GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power‑efficient and high‑performance solutions for high‑growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF’s talented, global team remains focused every day on security, longevity and sustainability. For more information, visit www.gf.com.
New College Graduates Overview:
We offer many full-time employment paths for recent graduates, which provide accelerated training in a fast-paced work environment, cross-functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life-long connections and skills.
Summary of Role:
We are seeking highly motivated employees with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9). New hires will immediately embed within our project teams of process, integration, and device engineers in developing new process flows and devices in RF GaN technologies, targeting new market applications.
Essential Responsibilities Include
- This position offers the unique opportunity to develop innovative RF GaN technologies as a Technology Development Process Integration and Device Engineer and deliver performance and reliability demonstration across technology development qualification milestones from conception through manufacturing installation
- Initial and primary responsibilities include development of integrated process flows and devices structures that meet performance, reliability, yield, and cost objectives for our customers.
- Collaborate with various engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.
- Support technology development qualification milestones from conception through manufacturing installation.
- Support planning, design, execution, and analysis of experiments, including constructional analysis, inline and test lab measurement summarization for performance, reliability, manufacturability capability, and defectivity assessments.
Other Responsibilities
- Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.
Required Qualifications
- Requires a technical (University) degree in the field of Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science or related field from an accredited degree program. (Exceptions approved by local HR).
BS + 2-4 years of experience or
MS + 1-3 year of experience
PhD + 0-1 year of experience - Knowledge of GaN HEMT and modern semiconductor device physics and device characterization (DC, s-parameter, loadpull, pulsed I-V).
- Experience in semiconductor processing with emphasis on wide band gap materials like the III-N material system
- Must have at least an overall 3.0 GPA and proven good academic standing.
- Language Fluency - English (Written & Verbal)
- Physical Capacity Demands – some amount of time required to work in a manufacturing clean room, with product handling.
- Proficiency in MS Office and Statistical Analysis including Cpk, Design of Experiments
Preferred Qualifications
- Master’s or PhD in Electrical Engineering, Materials Science, Solid State Physics or other relevant Electrical engineering, engineering or physical science discipline.
- Prior related internship or co-op experience.
- Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
- Project management skills, i.e. the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.
- Strong written and verbal communication skills
- Strong planning & organizational skills
- Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices.
- Fundamental understanding of WBG device physics like dispersion, traps, self-heating, buffer design
- Experience in semiconductor processing in GaN-on-Silicon technologies.
- Experience characterizing GaN-on-Si or Wide Bandgap devices
- Excellent interpersonal skills, energetic, motivated, and self-driven
- Demonstrate ability to work well within a global matrixed team or environment with minimal supervision
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Expected Salary Range
$85,000.00 - $146,000.00The exact Salary will be determined based on qualifications, experience and location.
If you need a reasonable accommodation for any part of the employment process, please contact us by email at [email protected] and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.
An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations.
GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.
All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law
Skills Required
- Technical university degree in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Materials Science, or a related field
- BS degree with 2-4 years of experience, or MS degree with 1-3 years of experience, or PhD with 0-1 year of experience
- Knowledge of GaN HEMT, modern semiconductor device physics, and device characterization including DC, S-parameter, load-pull, and pulsed I-V measurements
- Experience in semiconductor processing, especially wide-bandgap materials such as the III-N material system
- Minimum overall GPA of 3.0 and proven good academic standing
- English language fluency, written and verbal
- Ability to work in a manufacturing clean room and handle products
- Proficiency in MS Office and statistical analysis, including Cpk and Design of Experiments
- Ability to work safely and support Environmental, Health, Safety, and Security programs
- Master's or PhD in Electrical Engineering, Materials Science, Solid State Physics, engineering, or physical science
- Prior related internship or co-op experience
- Leadership experience in the workplace, school projects, competitions, or similar settings
- Project management skills and ability to innovate, execute solutions, and navigate ambiguity
- Strong written and verbal communication skills
- Strong planning and organizational skills
- Research experience with GaN e-mode or d-mode HEMT RF high-frequency or power high-voltage devices, or other wide-bandgap devices
- Understanding of wide-bandgap device physics, including dispersion, traps, self-heating, and buffer design
- Experience in GaN-on-Silicon semiconductor processing
- Experience characterizing GaN-on-Silicon or other wide-bandgap devices
- Ability to work effectively in a global matrixed environment with minimal supervision
GlobalFoundries Compensation & Benefits Highlights
The following summarizes recurring compensation and benefits themes identified from responses generated by popular LLMs to common candidate questions about GlobalFoundries and has not been reviewed or approved by GlobalFoundries.
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Healthcare Strength — Comprehensive medical, dental, vision, life, disability, and mental health support is presented as a meaningful part of the package. Wellness programs and an Employee Assistance Program add to the sense of broad health coverage.
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Retirement Support — A 401(k) with matching from day one and access to an employee stock purchase program are positioned as notable financial benefits. Retirement provisions are repeatedly framed as a strong counterweight to other compensation concerns.
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Leave & Time Off Breadth — Time-off provisions are described as generous, including high annual vacation accrual, dedicated sick time, and additional personal days. Extended paid parental leave frameworks are also outlined as a substantial leave benefit.
GlobalFoundries Insights
What We Do
GlobalFoundries (GF) is one of the world’s leading semiconductor manufacturers. GF is redefining innovation and semiconductor manufacturing by developing and delivering feature-rich process technology solutions that provide leadership performance in pervasive high growth markets. GF offers a unique mix of design, development, and fabrication services. With a talented and diverse workforce and an at-scale manufacturing footprint spanning the U.S., Europe and Asia, GF is a trusted technology source to its worldwide customers. For more information, visit www.gf.com. GlobalFoundries is an Equal Employment Opportunity/Affirmative Action (EEO/AA) employer Minorities/Female/Disabled/Veteran (M/F/D/V).#CB
