Principal Design Engineer

Responsibilities:

• Contribute to AMS design for High-speed Memory PHYs.
• Responsible for major sub-system of Memory PHY like Tx, Rx or Clocking
• Understand system specification, define design micro-architecture, and define the design hierarchy.
• Participate in technical discussions with cross function teams
• Fully accountable for AMS design quality and schedule
• Own the design progress, identify potential risks, and mitigation plan for sub-system
• Mentor and provide technical guidance to team working in the projects.
• Contribute to AMS methodology improvements to boost efficiency and productivity.

Requirements/Qualifications:

• Bachelor's/Master's degree in Electronics/Electrical Engineering. Specialization in VLSI/Micro-electronics is preferred.
• 7+ years of Analog Mixed Signal design experience
• Sound knowledge on AMS design techniques and circuit architecture
• Strong experience on high-speed circuits like Tx, Rx, CTLE, Amplifiers, Samplers
• Exposure to Serdes, DDR, HBM technologies
• Should have knowledge on all aspects of Mixed Signal IP design.
• Experience on working with AMS verification and logic designers to achieve AMS circuit requirements
• Hands-on experience on block, IP and system level design.
• Should have involved in designing multiple IPs from Specification to Productization
• Experienced in lab debugs on AMS IPs
• Excellent communication and interpersonal skills, demonstrate teamwork and collaboration skills.