PhD thesis on Next Generation Magnetic Storage Solutions (STT-MRAM): Development of innovative, non-destructive MTJ characterizations for inline process control of integrated process wafers

The GlobalFoundries Ph.D. program provides Ph.D. students with the unique opportunity to help shape the integration of embedded non-volatile memories in leading-edge logic semiconductors. In collaboration with globally based teams, the work is based on an already existing, embedded STT-MRAM technology in the 22nm FDSOI technology. The aim is to further develop and optimize measurement techniques for the characterization of MTJ stack parameters, among others, through the implementation of advanced techniques such as current-in-plane tunneling (CIPT), photo-magneto-optical Kerr effect (pMOKE) and ferromagnetic resonance (FMR) on fully processed wafers for timely inline process control. The extraction of critical MTJ-relevant parameters will be carried out in relation to electrical and yield-relevant key parameters. 

This position is designed for 3 years. For this thesis, we are looking for a research candidate who would like to take on a coordinating role in the joint project as well as align his research work in relation to mass production topics. You will support the team with the further development of inline measurement methods for the magnetic and electrical characterization of different MTJ stacks. This work will be organized and coordinated by you independently in close cooperation with the responsible department. You conduct systematic studies to evaluate the repeatability of measurements, analyze and interpret their results in order to gain further insights into the behavior of MTJ stack parameters. You identify sources of variability. The results are systematically documented by you and summarized as part of regular reporting. GF supports the publication of scientific results in leading journals and the protection of intellectual property through the filing of patents.