MOCVD Scientist

General Description:

HRL Laboratories is seeking a highly skilled MOCVD Scientist to join our RF devices team and play a crucial role through ownership of an MOCVD tool. This role involves spearheading the development of innovative processes for the growth of GaN HEMTs, conducting research in emerging ultra-wide bandgap (UWBG) semiconductors, and improving existing recipes on the tool. The successful candidate will have ample opportunities for career growth, including branching out into other areas such as molecular beam epitaxy (MBE) epitaxial growth and microfabrication device development.

Essential Duties:

Recipe Design and Optimization: Design, optimize, and execute MOCVD recipes to synthesize GaN HEMT Epitaxial structures with superior crystal quality and minimal defect density. Work with a variety of substrates, including Si, SiC, Sapphire, and AlN.

Material Characterization: Utilize advanced analytical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), contactless Hall effect measurements, Hg-CV, and others as necessary to characterize material properties.

Cross-functional Collaboration: Collaborate closely with cross-functional teams to devise and implement novel device structures rooted in AlN UWBG materials, with a primary focus on high-electron-mobility transistors (HEMTs).

Continuous Learning: Stay abreast of the latest advancements in MOCVD technology, semiconductor materials, and device fabrication techniques through thorough literature review and active participation in relevant conferences and workshops.

Process Development: Design, optimize, and execute MOCVD processes for the growth of III-Nitride films with exceptional crystal quality and low defect density. Substrates include Si, SiC, Sapphire, and AlN.

Material Analysis: Characterize material properties using advanced analytical techniques, such as XRD, SEM, AFM, contactless Hall effect measurements, Hg-CV, and others as needed.

Bandgap Optimization: Perform bandgap calculations to optimize semiconductor structures for desired electronic properties.

Device Innovation: Collaborate with cross-functional teams to develop and implement novel device structures based on AlN UWBG materials, with a focus on HEMTs.

Knowledge Enhancement: Stay current with the latest advancements in MOCVD technology, semiconductor materials, and device fabrication techniques through literature review and participation in relevant conferences and workshops.

Required Skills:

MOCVD Expertise: Proficiency in designing and optimizing MOCVD processes for semiconductor materials through extensive hands-on experience.

Analytical Techniques: Demonstrated ability to characterize material properties using advanced analytical techniques like XRD, SEM, AFM, etc.

Statistical Analysis: Experience in statistical analysis using standard software (e.g., Python, JMP, etc.).

MOCVD Reactor Knowledge: Bonus points for hands-on experience in MOCVD reactor design, maintenance, and troubleshooting.

Device Fabrication: Experience in device fabrication (lithography, deposition, etching, etc) and testing (DC, RF, etc) is desired.

Project Management: Project management experience is a plus.

Required Education:

•PhD Degree: A PhD degree in electrical engineering, materials science, chemical engineering, or a related science/engineering field.

•Alternative Qualifications: A Bachelor's or Master's degree with 7 or 5 years (respectively) of industry experience is also acceptable.

Compensation:

The base salary range for this full-time position is $132,765 - $165,983 + bonus + benefits.

Our salary ranges are determined by role, level, and location. The range displayed on each job posting reflects the minimum and maximum target for new hire salaries for the position. Within the range, individual pay is determined by work location and additional factors, including job-related skills, experience, and relevant education or training. Your recruiter can share more about the specific salary range during the hiring process. Please note that the compensation details listed reflect the base salary only, and do not include potential bonus or benefits.