Director of Memory Development

We are seeking a Director of Memory Development in Brno, Czech Republic, to lead an international memory development team. In this role, you will be responsible for defining and executing the strategy and roadmap of onsemi’s growing memory portfolio, in alignment with platform and product roadmaps. This includes non-volatile memories such as EEPROM, OTP, and RRAM, as well as SRAM and ROM IP.

This role owns the entire memory portfolio and strategy and is responsible for enabling business capabilities and outcomes, not just executing projects. The Director ensures that memory development investments are aligned with business priorities, platform strategies, and technology roadmaps, while building a sustainable, scalable organization capable of delivering competitive memory solutions across multiple technology nodes and end markets.

The Director serves as the primary technical and strategic leader for memory development, balancing long-term roadmap planning with near-term execution and working closely with Product Lines, Technology Development, CAD/EDA, Test, and Reliability. This role reports to senior engineering leadership in Central Engineering and interacts regularly with executives across the company.

• Maintain the memory roadmap, aligning with platform strategies, business goals, and product planning.
• Define make/buy/partner strategies for memory IP and manage third-party relationships.
• Optimize memory portfolio through focused reuse, lifecycle management, and promoting consistency across technology and business needs.
• Track industry trends and convert them into strategic actions to inform roadmap and investment decisions.
• Oversee memory IP development from architecture through production release, ensuring high quality and competitive PPA, and meeting standards for schedule, reliability, testability, and manufacturability.
• Lead and build a high-performing global memory development team; define organizational structure, elastic resourcing model, and succession plan.
• Empower team and foster accountability, excellence, collaboration, and continuous improvement.
• Promote trust, clarity, and results as a strategic thinker with strong technical and communication skills.
• Act as liaison and point of contact between the memory development team and stakeholders. Communicate strategy, progress, and risks to leadership.

Required

• Bachelor’s degree in Electrical Engineering or related field (Master’s degree preferred).
• 15+ years of experience in semiconductor memory development, with deep expertise in embedded NVM technologies (EEPROM, OTP, Flash, RRAM, MRAM).
• Demonstrated understanding of SRAM architectures and compiler‑based memory solutions.
• Proven leadership experience managing managers or senior technical leaders.
• Track record of defining and delivering memory IP strategies that balance innovation, execution, and business needs.
• Strong cross‑functional leadership experience across design, technology, test, and product organizations.
• Excellent communication and presentation skills, with the ability to influence at senior leadership levels.

Preferred

• 5+ years of experience leading a memory development team.
• Experience with RRAM development.
• Experience delivering memory IP for automotive or safety‑critical applications.
• Experience leading globally distributed engineering organizations.