Teams at Navitas Semiconductor

Leads ultra-high-voltage SiC device and process technology from architecture and simulation through fabrication, characterization, reliability qualification, and foundry transfer. Serves as technical lead and principal investigator for U.S. government-funded programs, manages milestones and deliverables, develops patents, supports customers, and mentors engineers across global sites. Focus areas include 3.3 kV–10 kV+ MOSFETs, diodes, JFETs, bipolar devices, process integration, TCAD, and high-voltage reliability testing.

Lead product engineering for GaN power semiconductor devices from silicon evaluation and NPI through qualification, production ramp, and sustaining engineering. Own characterization, CP/FT test strategy, yield improvement, datasheet validation, reliability assessment, and qualification readiness. Analyze device physics, manufacturing variation, and power switching behavior while coordinating cross-functional investigations with device, process, reliability, quality, test, applications, wafer fab, and OSAT teams.

Lead SiC technology development and characterization for power devices and modules. Define test architectures, perform root-cause analysis, drive reliability learning/qualification, architect experiments, build automated analysis platforms, and mentor engineers to accelerate robust SiC solutions across device, process, package, and application domains.