Teams at Navitas Semiconductor

Provide technical leadership for U.S. government-funded SiC power device programs, define device roadmaps (650 V–6.5 kV), lead TCAD/modeling, characterization, pulsed-power and reliability testing, translate program goals into work packages, coordinate cross-functional execution, support proposals and compliance, and transition funded R&D into manufacturable, high-reliability products for defense, aerospace, energy, and critical-infrastructure applications.

Perform on-wafer and packaged electrical measurements on SiC and GaN power devices using probe stations and lab instrumentation. Execute test procedures (DC parametrics, leakage, breakdown, switching), collect and document measurement data, support correlation and troubleshooting, maintain lab safety, equipment records, and sample traceability while working closely with device engineers.

Lead SiC technology development and characterization for power devices and modules. Define test architectures, perform root-cause analysis, drive reliability learning/qualification, architect experiments, build automated analysis platforms, and mentor engineers to accelerate robust SiC solutions across device, process, package, and application domains.