Company Description
Vertical Semiconductor, a transformative MIT spin-out, is leading the development of vertical gallium nitride (GaN) power transistors which will revolutionize power electronics in industries such as data centers, energy systems, renewable energy and electric vehicles (EVs).
Role Description
As a rapidly growing startup, we are seeking a full-time Senior Characterization & Reliability Engineer to help drive the commercialization of vertical GaN technology and support our engineering team through its critical stages of growth. This role will focus on characterizing vertical GaN devices for a variety of target applications using both on-wafer and packaged device test setups. You will have opportunity to be hands-on in shaping the development of a world-changing power electronics, and your contributions will directly impact the success of the company and the industries we aim to disrupt. We have a preference for candidates who are able to work from our office at Greentown Labs (Somerville, MA), but are open to considering hybrid candidates.
Key Skills
Deep knowledge of electrical characterization of power devices (IV, CV, pulsed IV, gate charge, etc.) using high-voltage test instrumentation and curve tracers for on-wafer probing with semiautomatic probe stations.
Ability to design circuit boards for packaged device tests such as UIS and switching performance.
Familiarity with JEDEC qualification standards (HTRB, HTGB, TDDB, thermal cycling, etc.) and their evaluation.
Strong computer skills with proficiency in python/MATLAB or similar for data analysis and measurement automation.
Well-versed in key power device parameter extraction for data sheets.
Experience with schematic entry, circuit simulation, and PCB layout tools.
Desire to work in a highly-collaborative, fast-paced startup environment.
Power circuit design experience with GaN or SiC preferred.
Excellent communication skills, with the ability to work effectively across cross-functional teams and with external partners.
Qualifications
Applicants should have a master’s degree or PhD in electrical engineering with a focus on power device design/characterization or have 5+ years of relevant industry experience. Familiarity with power devices for medium voltage (600-1200 V) applications such as GaN HEMTs, SiC MOSFETs, or Si IGBTs is strongly preferred. Applicant should be comfortable working closely with semiconductor device engineers and expect a high degree of ownership in their role.
Compensation
We offer a competitive salary and comprehensive benefits package along with participation in our stock option program that is commensurable with candidates’ experience and impact.
Values
Vertical Semiconductor is seeking an engineer who is not only capable of accelerating the technical vision of the company but is also willing to get involved in the day-to-day execution of a startup. The ideal candidate is someone who enjoys tackling complex engineering challenges, is comfortable with a hands-on approach in a collaborative arena and thrives in a startup environment where they can make an immediate impact. We value integrity, initiative, problem-solving, creativity and a passion for creating transformative technology that can change industries and improve the world.
Skills Required
- Master's degree or PhD in Electrical Engineering or 5+ years relevant industry experience
- Deep knowledge of electrical characterization of power devices (IV, CV, pulsed IV, gate charge) with high-voltage test instrumentation and curve tracers
- Experience with on-wafer probing and semiautomatic probe stations
- Ability to design circuit boards for packaged device tests (UIS, switching performance)
- Familiarity with JEDEC qualification standards (HTRB, HTGB, TDDB, thermal cycling) and their evaluation
- Proficiency in Python, MATLAB, or similar for data analysis and measurement automation
- Experience with schematic entry, circuit simulation, and PCB layout tools
- Well-versed in power device parameter extraction for datasheets
- Excellent communication skills and ability to work across cross-functional teams
- Comfort working closely with semiconductor device engineers and high ownership in role
- Familiarity with power devices for medium voltage (600-1200 V) applications (GaN HEMTs, SiC MOSFETs, Si IGBTs)
- Power circuit design experience with GaN or SiC
What We Do
Vertical Semiconductor, a venture-backed MIT spin-out, is leading the development of vertical gallium nitride (GaN) power semiconductors to build the foundational power layer for the next generation of compute and AI.
